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TI's NexFET™ N-channel power MOSFETs achieve industry's lowest resistance

Lowest Rdson 25-V and 30-V devices in 5 mm by 6 mm QFN package

Jan 19, 2015

DALLAS, Jan. 19, 2015 /PRNewswire/ -- Texas Instruments (TI) (NASDAQ: TXN) today introduced 11 new N-channel power MOSFETs to its NexFET™ product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry's lowest on-resistance (Rdson) in a QFN package. In addition, TI's new 12-V FemtoFET™ CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a tiny 0.6 mm by 1 mm package. For more information, samples or a reference design, visit www.ti.com/csd16570q5b-pr.

The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson. Read a blog, "Power MOSFET safe operating area (SOA) curves for designing with hot-swap and ORing FET controllers."  Download a 12-V, 60-A hot swap reference design featuring TI's CSD17570Q5B NexFET.

TI's new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720. Download the application note "Robust Hot Swap Designs" to understand how a transistor is selected as a pass element and how to ensure safe operation under all possible conditions.

New NexFET products and key features

Part Number

Application

Vds/Vgs

Package (mm)

Rdson max (mohm)

Qg (4.5) (nC)

4.5V

10V

CSD16570Q5B

ORing/Hot Swap

25/20

QFN 5x6 (Q5B)

0.82

0.59

95

CSD17570Q5B

30/20

0.92

0.69

93

CSD17573Q5B

Low Side Buck/
ORing/Hot Swap

30/20

QFN 5x6 (Q5B)

1.45

1.0

49

CSD17575Q3

Low Side Buck

30/20

QFN 3.3x3.3 (Q3)

3.2

2.3

23

CSD17576Q5B

QFN 5x6 (Q5B)

2.9

2.0

25

CSD17577Q5A

High Side Buck

30/20

QFN 5x6 (Q5A)

5.8

4.2

13

CSD17577Q3A

QFN 3.3x3.3 (Q3A)

6.4

4.8

13

CSD17578Q3A

9.4

7.3

7.9

CSD17579Q3A

14.2

10.2

5.3

CSD85301Q2

Dual Independent FET

20/10

QFN 2x2 (Q2)

27

N/A

4.2

CSD13383F4

Load Switch

12/10

FemtoFET 0.6x1.0 (0402)

44

N/A

2.0

 

Availability, packaging and pricing
Available in volume now from TI and its authorized distributors, the products range in price from US$0.10 for the FemtoFET CSD13383F4 to US$1.08 for the CSD16570Q5B and CSD17570Q5B, all in 1,000-unit quantities.

About TI'S NexFET power MOSFETs
TI's NexFET power MOSFETs improve energy efficiency in high-power computing, networking, industrial and power supplies. These high-frequency, high-efficiency analog power MOSFETs give system designers access to the most advanced DC/DC power conversion solutions available.

Find out more about TI's power management portfolio:

About Texas Instruments
Texas Instruments Incorporated is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today.  Learn more at www.ti.com.

Trademarks
WEBENCH is a registered trademark and TI E2E, NexFET and FemtoFET are trademarks of Texas Instruments. All other trademarks belong to their respective owners.

 

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